Photo-Emf Peculiarities of Ge Nanocluster Structures Formed on Oxidized Si Surface

Authors

  • Yu. M. Kozyrev Chuiko Institute of Surface Chemistry of National Academy of Sciences of Ukraine
  • M. Yu. Rubezhanska Chuiko Institute of Surface Chemistry of National Academy of Sciences of Ukraine
  • N. P. Storozhuk Chuiko Institute of Surface Chemistry of National Academy of Sciences of Ukraine
  • S. V. Kondratenko Taras Shevchenko National University of Kyiv

Abstract

Ge nanocluster systems on SiOх are paid much interest of scientists today as far as introduction of an insulting SiOх layer can modify essentially the electrical properties of well examined Ge on Si structures making such systems prospective in the view of their possible application to new nanoelectronic devices such as memory cells, solar elements, and infrared photodetectors. A possibility of epitaxial formation of Si and Ge nanoclusters on initially amorphous silicon oxide layer is considered. The effect of such a layer on the density and uniformity distribution of the self-assembled Ge nanoclusters formed in molecular-beam epitaxy chamber "Katun" on SiOх (х ? 2) and their optoelectronic properties, in particular lateral photoconductivity and photo-emf, has been investigated.

 

References

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How to Cite

(1)
Kozyrev, Y. M.; Rubezhanska, M. Y.; Storozhuk, N. P.; Kondratenko, S. V. Photo-Emf Peculiarities of Ge Nanocluster Structures Formed on Oxidized Si Surface. Him. Fiz. Tehnol. Poverhni 2011, 2, 399-402.

Issue

Vol. 2 No. 4 (2011): Chemistry, Physics and Technology of Surface / Himia, Fizika ta Tehnologia Poverhni

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