Synthesis and physicochemical properties of nanosized vanadium dioxide on silica surface

Authors

  • D. V. Nazarov Saint-Petersburg State University
  • O. M. Osmolowskaya Saint-Petersburg State University
  • V. M. Smirnov Saint-Petersburg State University
  • I. V. Murin Saint-Petersburg State University
  • O. V. Glumov Saint-Petersburg State University
  • N. A. Mel'nikova Saint-Petersburg State University

Abstract

The method of molecular layering ? atomic layer deposition with varied conditions of synthesis has been used to obtain two- and tree-dimensional nanostructures of vanadium dioxide on single-crystal silicon surface. A growth mechanism for nanostructures of various dimensionalities has been proposed based on the data of atomic force microscopy. The magnetic and electrical properties of obtained samples have been studied by magnetic susceptibility and impedance spectroscopy methods. The semiconductor-metal phase transition in the nanosized vanadium dioxide on the silica surface has been found to occur at a reduced temperature as compared with that typical of the bulk.

References

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How to Cite

(1)
Nazarov, D. V.; Osmolowskaya, O. M.; Smirnov, V. M.; Murin, I. V.; Glumov, O. V.; Mel’nikova, N. A. Synthesis and Physicochemical Properties of Nanosized Vanadium Dioxide on Silica Surface. Him. Fiz. Tehnol. Poverhni 2011, 2, 403-408.

Issue

Vol. 2 No. 4 (2011): Chemistry, Physics and Technology of Surface / Himia, Fizika ta Tehnologia Poverhni

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Articles

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