Electrostatic Field Tensities near Irregularities of Porous Silicon Surface

Authors

  • M. I. Terebinska Chuiko Institute of Surface Chemistry of National Academy of Sciences of Ukraine
  • V. V. Lobanov Chuiko Institute of Surface Chemistry of National Academy of Sciences of Ukraine
  • A. G. Grebenyuk Chuiko Institute of Surface Chemistry of National Academy of Sciences of Ukraine

Abstract

Equilibrium spatial structure of the Si89(OH)43H*36 cluster model simulated for a pyramid-like formation on porous silicon surface has been calculated within the frameworks of density functional theory method with 6-31G** basis set. The electron charge and electrostatic field distribution have been evalua­ted in the vicinity of such a formation. The electrostatic field tensity has been found to be great enough to ionize adsorbed organic molecules.

References

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How to Cite

(1)
Terebinska, M. I.; Lobanov, V. V.; Grebenyuk, A. G. Electrostatic Field Tensities Near Irregularities of Porous Silicon Surface. Him. Fiz. Tehnol. Poverhni 2010, 1, 235-237.

Issue

Vol. 1 No. 3 (2010): Chemistry, Physics and Technology of Surface / Himia, Fizika ta Tehnologia Poverhni

Section

Articles

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