Chemistry, Physics and Technology of Surface, 2014, 5 (3), 245-255.

The pecularities of (100) cleavage surface crystallography of In4Se3 layered semiconductor crystals



P. V. Galiy

Abstract


The paper presents the results of structural investigations of In4Se3 layered chainlike semiconductor crystals by X-ray diffraction and their (100) cleavage surfaces studies by low energy electron diffraction (LEED). It has been shown that the (100) In4Se3 cleavage surface is structurally stable and does not undergo atomic reconstruction in a wide temperature range of 77–295 K. The constants of two-dimensional lattice on (100) cleavage plane surfaces of orthorhombic layered In4Se3 crystals were evaluated with application of diffraction patterns. Calculated surface lattice constants b = 11.475 Å and c = 3.734 Å agree, within the error limits, with their values obtained by X-diffraction (b = 12.308(1) Å and c = 4.0810(5) Å), indicating the adequacy of the model used to calculate the lattice constants of cleavage (100) surfaces of In4Se3 from the LEED results. Thereby, it is shown that (100) In4Se3surfaces are structurally stable with respect to the surface lattice symmetry they and do not undergo thermal atomic reconstruction, and surface lattice constants are slightly variable in a wide temperature range of 77–295 K within the temperature elongation limits.

Keywords


layered chainlike semiconductor crystals; (100) In4Se3 cleavage surface; structural studies

Full Text:

PDF (Українська)

References


1. Galiy P.V., Nenchuk T.M., Ciszewski A. et al. Indium induced nanostructures on In4Se3(100) surface studied by scanning tunnelling microscopy. Functional Materials. - 2013. - V. 20, N 1. – P. 37–43.

2. Галій П.В., Ненчук Т.М., Ціжевський А. та ін. Наноструктурні дослідження поверхонь (100) кристалів In4Se3, інтеркальованих сріблом // Металлофизика и новейшие технологии. - 2013. - Т. 35, № 8. – C. 1031–1043.

3. Оура К., Лифшиц В.Г., Саранин А.А. и др. Введение в физику поверхности. - Москва: Наука, 2005. – 499 c.

4. Вудраф Д., Делчар Т. Современные методы исследования поверхности. - Москва: Мир, 1989. – 568 c.

5. Wedler H., Heinz K. Information on surface structure by low energy electron diffraction. Vakuum in Forschung und Praxis. - 1995. – N 5. – P. 107–114.

6. Schwarz U., Hillebrecht H., Deiseroth H. et al. In4Te3 und In4Se3: Neubestimmung der Kristallstrukturen, druckabha-giges Verhalten und eine Bemerkung zur Nichtexistenz von In4S3. Zeitschrift fur Kristallographie. - 1995. - V. 210, N 5. – P. 342–347.

7. Galiy P.V., Musyanovych A.V., Fiyala Ya.M. The interface microscopy and spectroscopy on the cleavage surfaces of the In4Se3 pure and copper intercalated layered crystals. Physica E: Low-dimensional Systems and Nano-structures. - 2006. - V. 35, N 2. - P. 88–92.

8. Galiy P.V., Nenchuk T.M., Losovyj Ya.B. et al. Structural and energy changes at the cleavage surfaces of In4Se3 layered crystals under interface formation. Functional Materials. - 2008. - V. 15, N 1. - P. 68–73.

9 .Galiy P.V., Nenchuk T.M., Dveriy O.R. et al. Atomic force microscopy study of the cleavage surfaces of In4Se3 layered semiconductor crystal. Physica E: Low-dimensional Systems and Nanostructures. - 2009. - V. 41, N 3. - P. 465–469.

10. Jaegermann W., Klein A., Pettenkofer C. Scanning Tunneling Spectroscopy of Layered Cuprates and Transition Metal Chalcogenides // Electron Spectroscopy Applied to Low-Dimentional Materials (Physics and Chemistry of Materials with Low-Dimen. Structures): [Ed. by H. Hughes, H. Starnberg]. - Dordrext/ Boston/London: Kluwer Academic Publisher. - 2000. - V. 24. - P. 317–402.

11. Галій П.В., Ненчук Т.М., Мельник О.Я. та ін. Кількісна Oже-електронна спектроско-пія формування інтерфейсних шарів вуглецю на поверхнях вакуумних сколів кристалів шаруватих напівпровідників In4Se3. Укр. фіз. журн. - 2003. - Т. 48, № 3. - C. 256–268.

12. Henson T.D., Sarid D., Bell L.S. STM of layered-structure semiconductors. J. Microsc. - 1988. - V. 152, N 2. - P. 467–472.

13. Nicholls J.M., Debever J.M. Conduction band structure of the III-VI Layer Compound GaSe Studied with Inverse photoemission. Surface Science. - 1987. - V. 189/190. - P. 919–926.

14. Brandt J.J. Geometric and electronic structure of misfit layered compounds and epitaxial thin films of PbS on transition metal dichalcogenides: Dissert. zur Erlangung des Dokt. der Mathem.-Nat. - Kiel, 2003. - 103 p.

15. Нестеренко Б.А., Ляпин В.Г. Фазовые переходы на свободных гранях и межфазовых границах в полупроводниках. - Киев: Наукова думка, 1990. - 152 с.

16. Ming Li., Thiry P., Degiovanni A. Role of multiple dipole scattering in high-resolution electron energy loss spectroscopy. Phys. Rev. B. - 1994. - V. 49, N 17. - P. 11613–11615.

17. Bo Ying Han, Hevesi K., Li-Ming Yu. Heteroepitaxial growth of C70 films on MoS2 (0001) and their characterization by low energy electron diffraction and photoelectron spectroscopy. J. Vac. Sci. Technol. A. Vac. Surf. Films. - 1994. - V. 13, N 3. - P. 1036–1039.

18. Balitskii O.A., Jaeckel B., Jaegermann W. Sarface properties of GaTe single crystals. Physics Letters A. - 2008. - V. 372, N 3. - P. 3303–3306.

19. Galiy P.V., Losovyj Ya.B., Nenchuk T.M. et al. Structural studies of (100) cleavage surfaces of In4Se3 layered crystals using low energy electron diffraction // 6th Intern. Workshop on Surface Physics. Functional Materials. Prog. and Abst. 1-6 September 2013. (Univ. of Wroclaw, Niemcza, Poland, 2013). – P. 51.

20. Losovyj Ya.B., Klinke M., Galiy P. et al. The electronic structure of surface chains in the layered semiconductor In4Se3(100) . Applied Physics Letters. - 2008. - V. 92, N 12. - P. 122107-1-122107-3.

21. Losovyj Ya.B., Makinistian L., GaliyP.V. et al. The anisotropic band structure of layered In4Se3(001). Journal of Applied Physics. - 2008. - V. 104, N 8. - P. 083713-1-083713-7.

22. Ман Л.И., Имамов Р.М., Семилетов С.А. Типы кристаллических структур халькоге-нидов Ga, In и Tl. Кристаллография. - 1976. - Т. 21, № 3. - С. 628–639.

23. Стахира И.М., Ксьондзык П.Г. Нарушение трансляционной симметрии слоистых кристаллов . Укр. фіз. журн. - 1981. - Т. 26, № 5. - С. 762–769.

24. Ормонт Б.Ф. Введение в физическую химию и кристаллохимию полупроводников. - Москва: Высшая школа., 1973. - 655 c.

25. Shen Erica T., Nancy Yu., Kenneth T. Park, Low-energy electron diffraction and ultraviolet photoemission spectroscopy study of (1´1) TiO2 (110). CASPER Summers – Research Experience for Undergraduates (REU) Program, 2009 REU Final Projects. Baylor University, Waco, USA. – 2009. – 7 p.




Copyright (©) 2014 P. V. Galiy

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.