Structure Peculiarities of Sheared Surfaces of Layered Crystals GaSe‹Sn›
Abstract
The processes of formation of nanosized defects on the surfaces of layered crystals and the formation of semi-conductor nanostructures on them have been studied. The atomic force microscopy method for examination of the surface morphological characteristics has been used. Morphological features of nanostructures have been revealed on sheared surface of crystalline GaSe containing 0.01% Sn under normal conditions.References
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