Chemistry, Physics and Technology of Surface, 2011, 2 (4), 413-416.

Structure Peculiarities of Sheared Surfaces of Layered Crystals GaSe‹Sn›



A. M. Pashayev, B. G. Tagiev, A. A. Safarzade

Abstract


The processes of formation of nanosized defects on the surfaces of layered crystals and the formation of semi-conductor nanostructures on them have been studied. The atomic force microscopy method for examination of the surface morphological characteristics has been used. Morphological features of nanostructures have been revealed on sheared surface of crystalline GaSe containing 0.01% Sn under normal conditions.

Full Text:

PDF (Русский)

References


Basinski Z.S., Dove D.B., Mooser E. Relationship between structures and dislocation in GaS and GaSe // Helv. Phys. Acta. – 1961. – V. 34. – P. 373–378.

Allakhverdiev K., Hana S., Kulibekov(Ulubeyov) A. et al. Room-temperature mid-, and far-infrared absorption and electrical properties of intercalated GaSe and TlInS2 crystals // Int. J. Infrared Millimeter Waves. – 2005. – V. 26. – P. 1741–1749.

Cote M., Cohen M.L. Theoretical study of the structural and electronic properties of GaSe nanotubes // Phys. Rev. B. – 1998. – V. 58. – P. 4277–4280.

Божков В.Г., Торхов Н.А., Ивонин И.В., Новиков В.А. Исследование свойств поверхности арсенида галлия методом сканирующей атомно-силовой микроскопии // Физика и техника полупроводников. – 2008. – Т. 42, № 5. – С. 546–554.

Торхов Н.А., Божков В.Г., Ивонин И.В., Новиков В.А. Определение фрактальной размерности поверхности эпитаксиального n-GaAs в локальном пределе // Физика и техника полупроводников. – 2009. – Т. 43, № 1. – С. 38–47.

Торхов Н.А., Божков В.Г., Ивонин И.В., Новиков В.А. Фрактальный характер распределения неоднородностей потенциала поверхности n-GaAs(100) // Физика и техника полупроводников. – 2009. – Т. 43, № 5. – С. 577–580.

Божков В.Г., Торхов Н.А., Новиков В.А. и др. Влияние различных обработок на фрактальный характер рельефа поверхности арсенида галлия // Поверхность. – 2011. – № 1. – С. 81–96.

Terhell I.C.I. Polytypism in the III-VI layer compounds // Prog. Cryst. Growth Charact. Mater. – 1983. – V. 7. – P. 55–110.

Guesdon J.P., Kobbi B., Julien C., Balkanski M. Electrical and photovoltaic properties of InxSe1−x thin films // Phys. Status Solidi A. – 1987. – V. 102. – P. 327–325.

Williams R.H., McAvej A.J. Electron emission studies from GaSe surfaces // J. Vac. Sci. Technol. – 1972. – V. 9. – P. 867–870.

Pearson W.B. The crystal structures of semiconductors and a general valence rule // Acta Crystallogr. – 1964. – V. 17. – P. 1–15.

Cuculescu E., Evtodiev I., Caraman M., Leontiev L. Study of generation-recombination processes of non-equilibrium charge carriers in single crystalline thin GaSe(Cu) films // J. Optoelectron. Adv. Mater. – 2006. – V. 8. – P. 112–118.




Copyright (©) 2011 A. M. Pashayev, B. G. Tagiev, A. A. Safarzade

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.